IPW65R280E6 datasheet

Маркировка

IPW65R280E6
Производитель

Infineon Technologies
Описание

Infineon Technologies IPW65R280E6 Current - Continuous Drain (id) @ 25?° C: 13.8A Drain To Source Voltage (vdss): 650V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 45nC @ 10V Input Capacitance (ciss) @ Vds: 950pF @ 100V Mounting Type: * Package / Case: * Power - Max: 104W Rds On (max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Series: CoolMOS?„? Vgs(th) (max) @ Id: 3.5V @ 440?µA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 13.8 A Resistance Drain-Source RDS (on): 0.28 Ohms at 10 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Fall Time: 12 nS Gate Charge Qg: 45 nC Minimum Operating Temperature: - 55 C Power Dissipation: 104 W Rise Time: 11 nS Typical Turn-Off Delay Time: 105 nS Part # Aliases: IPW65R280E6FKSA1 IPW65R280E6XK SP000795272
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17 шт.
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